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SST34HF164C-70-4C-LBK Datasheet(PDF) 5 Page - Silicon Storage Technology, Inc

Part # SST34HF164C-70-4C-LBK
Description  16 Mbit Dual-Bank Flash 2/4 Mbit SRAM ComboMemory
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Manufacturer  SST [Silicon Storage Technology, Inc]
Direct Link  http://www.sst.com/
Logo SST - Silicon Storage Technology, Inc

SST34HF164C-70-4C-LBK Datasheet(HTML) 5 Page - Silicon Storage Technology, Inc

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Preliminary Specifications
16 Mbit Dual-Bank Flash + 2/4 Mbit SRAM ComboMemory
SST34HF162C / SST34HF164C
5
©2004 Silicon Storage Technology, Inc.
S71269-01-000
9/04
SRAM Operation
With BES# low and BEF# high, the SST34HF162C/164C
operate as either 128K x16 or 256K x16 CMOS SRAM,
with fully static operation requiring no external clocks or tim-
ing strobes. The SST34HF162C/164C SRAM is mapped
into the first 128 KWord address space. When BES# and
BEF# are high, all memory banks are deselected and the
device enters standby. Read and Write cycle times are
equal. The control signals UBS# and LBS# provide access
to the upper data byte and lower data byte. See Table 4 for
SRAM Read and Write data byte control modes of opera-
tion.
SRAM Read
The SRAM Read operation of the SST34HF162C/164C is
controlled by OE# and BES#, both have to be low with
WE# high for the system to obtain data from the outputs.
BES# is used for SRAM bank selection. OE# is the output
control and is used to gate data from the output pins. The
data bus is in high impedance state when OE# is high.
Refer to the Read cycle timing diagram, Figure 3, for further
details.
SRAM Write
The SRAM Write operation of the SST34HF162C/164C is
controlled by WE# and BES#, both have to be low for the
system to write to the SRAM. During the Word-Write oper-
ation, the addresses and data are referenced to the rising
edge of either BES# or WE# whichever occurs first. The
write time is measured from the last falling edge of BES# or
WE# to the first rising edge of BES# or WE#. Refer to the
Write cycle timing diagrams, Figures 4 and 5, for further
details.
1269 B1.1
SuperFlash Memory
(Bank 1)
I/O Buffers
SuperFlash Memory
(Bank 2)
2/4 Mbit SRAM
AMSF
1- A0
AMSS
2- A0
DQ15 - DQ0
Control
Logic
BEF#
LBS#
UBS#
WE#
OE#
BES#
Address
Buffers
Address
Buffers
Notes: 1. AMSF = Most significant flash address
AMSF = A19 for SST34HF162C/164C
2. AMSS = Most significant SRAM address
AMSS = A16 for SST34HF162C and A17 for SST34HF164C
FUNCTIONAL BLOCK DIAGRAM


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