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2N5415 Datasheet(PDF) 1 Page - STMicroelectronics |
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2N5415 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 4 page 2N5415 2N5416 SILICON PNP TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. INTERNAL SCHEMATIC DIAGRAM December 2000 TO-39 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N5415 2N5416 VCBO Collector-Base Voltage (IE = 0) -200 -350 V VCEO Collector-Emitter Voltage (IB = 0) -200 -300 V VEBO Emitter-Base Voltage (IC = 0) -4 -6 V IC Collector Current -1 A IB Base Current -0.5 A Ptot Total Dissipation at Tc ≤ 25 oC 10 W Ptot Total Dissipation at Tamb ≤ 50 oC 1W Tstg Storage Temperature -65 to 200 oC ® 1/4 |
Similar Part No. - 2N5415_00 |
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Similar Description - 2N5415_00 |
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