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FDMF8700 Datasheet(PDF) 10 Page - Fairchild Semiconductor |
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FDMF8700 Datasheet(HTML) 10 Page - Fairchild Semiconductor |
10 / 13 page 10 www.fairchildsemi.com FDMF8700 Rev. C3 Typical Application Application Information Supply Capacitor Selection For the supply input (VCIN) of the FDMF8700, a local ceramic bypass capacitor is recommended to reduce the noise and to supply the peak current. Use at least a 1µF, X7R or X5R capac- itor. Keep this capacitor close to the FDMF8700 VCIN and CGND pins. Bootstrap Circuit The bootstrap circuit uses a charge storage capacitor (CBOOT) and the internal diode, as shown in Figure 26. Selection of these components should be done after the high-side MOSFET has been chosen. The required capacitance is determined using the following equation: where QG is the total gate charge of the high-side MOSFET, and ∆VBOOT is the voltage droop allowed on the high-side MOSFET drive. For example, the QG of the internal high-side MOSFET is about 21nC @ 12VGS. For an allowed droop of ~300mV, the required bootstrap capacitance is > 100nF. A good quality ceramic capacitor must be used. The average diode forward current, IF(AVG), can be estimated by: where fSW is the switching frequency of the controller. The peak surge current rating of the internal diode should be checked in-circuit, since this is dependent on the equivalent impedance of the entire bootstrap circuit, including the PCB traces. For applications requiring higher IF, an external diode may be used in parallel to the internal diode. QG CBOOT >= (1) ∆VBOOT IF(AVG) = QG x fSW (2) PWM CGND PGND VCIN VIN BOOT VSWH VCIN 12V Signal LDRV HDRV FDMF8700 DISB VIN 12V PWM CGND PGND VCIN VIN BOOT VSWH LDRV HDRV FDMF8700 DISB PWM CGND PGND VCIN VIN BOOT VSWH LDRV HDRV FDMF8700 DISB PWM CGND PGND VCIN VIN BOOT VSWH LDRV HDRV FDMF8700 DISB PWM3 EN PWM1 PWM2 LDRV PWM Controller VCC PWM4 GND Power GND VOUT Figure 26. Typical Application |
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Similar Description - FDMF8700 |
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