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BUK110-50GL Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK110-50GL Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 11 page Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level TOPFET THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Thermal resistance R th j-mb Junction to mounting base - - 0.8 1.0 K/W R th j-a Junction to ambient minimum footprint FR4 PCB - 50 - K/W STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (CL)DSS Drain-source clamping voltage V IS = 0 V; ID = 10 mA 50 - - V V (CL)DSS Drain-source clamping voltage V IS = 0 V; IDM = 4 A; tp ≤ 300 µs; - - 70 V δ ≤ 0.01 I DSS Zero input voltage drain current V DS = 12 V; VIS = 0 V - 0.5 10 µA I DSS Zero input voltage drain current V DS = 50 V; VIS = 0 V - 1 20 µA I DSS Zero input voltage drain current V DS = 40 V; VIS = 0 V; Tj = 125 ˚C - 10 100 µA R DS(ON) Drain-source on-state I DM = 25 A; VIS = 5 V - 30 35 m Ω resistance t p ≤ 300 µs; δ ≤ 0.01 OVERLOAD PROTECTION CHARACTERISTICS TOPFET switches off when one of the overload thresholds is reached. It remains latched off until reset by the input. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Short circuit load protection 1 T mb = 25 ˚C; L ≤ 10 µH E DS(TO) Overload threshold energy V DD = 13 V; VIS = 5 V - 1.1 - J t d sc Response time V DD = 13 V; VIS = 5 V - 0.8 - ms Over temperature protection T j(TO) Threshold junction temperature V IS = 5 V; from ID ≥ 2 A 2 150 - - ˚C INPUT CHARACTERISTICS T mb = 25 ˚C unless otherwise specified. The supply for the logic and overload protection is taken from the input. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V IS(TO) Input threshold voltage V DS = 5 V; ID = 1 mA 1.0 1.5 2.0 V I IS Input supply current V IS = 5 V; normal operation - 0.2 0.35 mA V ISR Protection reset voltage 3 2.0 2.6 3.5 V V ISR Protection reset voltage T j = 150 ˚C 1.0 - - I ISL Input supply current V IS = 5 V; protection latched 2 3.8 10 mA V (BR)IS Input clamp voltage I I = 10 mA 6 - - V R IG Input series resistance to gate of power MOSFET - 1.5 - k Ω 1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for P DSM, which is always the case when VDS is less than VDSP maximum. Refer to OVERLOAD PROTECTION LIMITING VALUES. 2 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I D ensures this condition. 3 The input voltage below which the overload protection circuits will be reset. June 1996 3 Rev 1.000 |
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