©2006 Silicon Storage Technology, Inc.

S71271-02-000

1/06

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Data Sheet

FEATURES:

•

Single Voltage Read and Write Operations

– 2.7-3.6V

•

Serial Interface Architecture

– SPI Compatible: Mode 0 and Mode 3

•

High Speed Clock Frequency

–50 MHz

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Low Power Consumption:

– Active Read Current: 10 mA (typical)

– Standby Current: 5 µA (typical)

•

Flexible Erase Capability

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

– Uniform 64 KByte overlay blocks

•

Fast Erase and Byte-Program:

– Chip-Erase Time: 35 ms (typical)

– Sector-/Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 7 µs (typical)

•

Auto Address Increment (AAI) Programming

– Decrease total chip programming time over

Byte-Program operations

•

End-of-Write Detection

– Software polling the BUSY bit in Status Register

– Busy Status readout on SO pin in AAI Mode

•

Hold Pin (HOLD#)

– Suspends a serial sequence to the memory

without deselecting the device

•

Write Protection (WP#)

– Enables/Disables the Lock-Down function of the

status register

•

Software Write Protection

– Write protection through Block-Protection bits in

status register

•

Temperature Range

– Commercial: 0°C to +70°C

– Industrial: -40°C to +85°C

•

Packages Available

– 8-lead SOIC (200 mils)

– 8-contact WSON (6mm x 5mm)

•

All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

SST’s 25 series Serial Flash family features a four-wire,

SPI-compatible interface that allows for a low pin-count

package which occupies less board space and ultimately

lowers total system costs. The SST25VF016B devices are

enhanced with improved operating frequency and even

lower power consumption than the original SST25VFxxxA

devices. SST25VF016B SPI serial flash memories are

manufactured with SST’s proprietary, high-performance

CMOS SuperFlash technology. The split-gate cell design

and thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST25VF016B devices significantly improve perfor-

mance and reliability, while lowering power consumption.

The devices write (Program or Erase) with a single power

supply of 2.7-3.6V for SST25VF016B. The total energy

consumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed during

any Erase or Program operation is less than alternative

flash memory technologies.

The SST25VF016B device is offered in both 8-lead SOIC

(200 mils) and 8-contact WSON (6mm x 5mm) packages.

See Figure 1 for pin assignments.

16 Mbit SPI Serial Flash

SST25VF016B

SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory