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K8D6316UBM-PC07 Datasheet(PDF) 4 Page - Samsung semiconductor |
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K8D6316UBM-PC07 Datasheet(HTML) 4 Page - Samsung semiconductor |
4 / 48 page NOR FLASH MEMORY K8D6x16UTM / K8D6x16UBM Revision 1.6 September, 2006 4 Table 2. K8D6316U DEVICE BANK DIVISIONS Device Part Number Bank 1 Bank 2 Mbit Block Sizes Mbit Block Sizes K8D6316U 16 Mbit Eight 8 Kbyte/4 Kword, thirty-one 64 Kbyte/32 Kword 48 Mbit Ninety-six 64 Kbyte/32 Kword ORDERING INFORMATION K 8 D 6x 1 6 U T M - T I 0 7 Samsung NOR Flash Memory Device Type Dual Bank Boot Block Bank Division 63 = 16Mbits + 48Mbits Operating Temperature Range C = Commercial Temp. (0 °C to 70 °C) I = Industrial Temp. (-40 °C to 85 °C) Block Architecture T = Top Boot Block B = Bottom Boot Block Version M = 1st Generation Access Time 07 = 70 ns 08 = 80 ns 09 = 90 ns Operating Voltage Range 2.7V to 3.6V Organization x8/x16 Selectable Table 1. PRODUCT LINE-UP Part No. - 7 -8 -9 Vcc 2.7V~3.6V Max. Address Access Time (ns) 70ns 80ns 90ns Max. CE Access Time (ns) 70ns 80ns 90ns Max. OE Access Time (ns) 25ns 25ns 35ns Package P = 48TSOP1(Lead-Free) Y = 48 TSOP1 D : FBGA(Lead Free) F : FBGA L : TBGA(Lead Free) T : TBGA |
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