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BUK104-50S Datasheet(PDF) 4 Page - NXP Semiconductors

Part # BUK104-50S
Description  PowerMOS transistor Logic level TOPFET
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUK104-50S Datasheet(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
PowerMOS transistor
BUK104-50L/S
Logic level TOPFET
BUK104-50LP/SP
OVERLOAD PROTECTION CHARACTERISTICS
With adequate protection supply
Provided there is adequate input
Refer also to OVERLOAD
voltage TOPFET detects when one
series resistance it switches off
PROTECTION LIMITING VALUES
of the overload thresholds is
and remains latched off until reset
and INPUT CHARACTERISTICS.
exceeded.
by the protection supply pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Short circuit load protection
1
V
PS = VPSN
2; T
mb = 25 ˚C; L ≤ 10 µH;
R
I ≥ 2 kΩ
E
DS(TO)
Overload threshold energy
V
DD = 13 V; VIS = 10 V
-
150
-
mJ
t
d sc
Response time
V
DD = 13 V; VIS = 10 V
-
375
-
µs
Over temperature protection
V
PS = VPSN; RI ≥ 2 kΩ
T
j(TO)
Threshold junction temperature from I
D ≥ 0.65 A
3
150
-
-
˚C
TRANSFER CHARACTERISTICS
T
mb = 25 ˚C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS = 10 V; IDM = 7.5 A tp ≤ 300 µs;
5
9
-
S
δ ≤ 0.01
I
D
Drain current
4
V
DS = 13 V;
V
IS = 5 V
-
25
-
A
V
IS = 10 V
40
-
A
PROTECTION SUPPLY CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Protection supply
I
PS,
Protection supply current
normal operation or
I
PSL
protection latched
BUK104-50L
V
PS = 5 V
-
0.2
0.35
mA
BUK104-50S
V
PS = 10 V
-
0.4
1.0
mA
V
PSR
Protection reset voltage
5
1.5
2.5
3.5
V
T
j = 150 ˚C
1.0
-
-
V
V
(CL)PS
Protection clamp voltage
I
P = 1.35 mA
11
13
-
V
REVERSE DIODE CHARACTERISTICS
T
mb = 25 ˚C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
SDS
Forward voltage
I
S = 15 A; VIS = VPS = VFS = 0 V;
-
1.0
1.5
V
t
p = 300 µs
t
rr
Reverse recovery time
not applicable
6
--
--
1 The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM, which is always the case when VDS is less than VDSP maximum.
2 At the appropriate nominal protection supply voltage for each type. Refer to QUICK REFERENCE DATA.
3 The over temperature protection feature requires a minimum on-state drain source voltage for correct operation. The specified minimum I
D
ensures this condition.
4 During overload condition. Refer also to OVERLOAD PROTECTION LIMITING VALUES and CHARACTERISTICS.
5 The supply voltage below which the overload protection circuits will be reset.
6 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
January 1993
4
Rev 1.200


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