Composite Transistors

1

Publication date: July 2003

SJJ00068BED

Silicon NPN epitaxial planar type (Tr1)

Silicon PNP epitaxial planar type (Tr2)

For switching/digital circuits

■ Features

• Two elements incorporated into one package

(Transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

■ Basic Part Number

• UNR2213 (UN2213) + UNR2122 (UN2122)

■ Absolute Maximum Ratings T

Marking Symbol: CW

Internal Connection

1

2

3

46

5

Tr2

Tr1

Note) The part number in the parenthesis shows conventional part number.

Parameter

Symbol

Rating

Unit

Tr1

Collector-base voltage

50

V

(Emitter open)

Collector-emitter voltage

50

V

(Base open)

Collector current

100

mA

Tr2

Collector-base voltage

−50

V

(Emitter open)

Collector-emitter voltage

−50

V

(Base open)

Collector current

−500

mA

Overall

Total power dissipation

300

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Unit: mm

1: Collector (Tr1)

4: Collector (Tr2)

2: Base (Tr2)

5: Base (Tr1)

3: Emitter (Tr2)

6: Emitter (Tr1)

EIAJ: SC-74

Mini6-G1 Package

2.90

0.16

+0.10

–0.06

(0.95)

0.30

+0.10

–0.05

0.50

+0.10

–0.05

(0.95)

6

5

4

1

32

+0.20

–0.05

10˚