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STTH3002CPI Datasheet(PDF) 2 Page - STMicroelectronics |
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STTH3002CPI Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 11 page Characteristics STTH3002C 2/11 1 Characteristics When the two diodes 1 and 2 are used simultaneously: ∆Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c) Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(RMS) RMS forward current 50 A IF(AV) Average forward current, δ = 0.5 TO-220AB, TO-247, I2PAK, D2PAK Per diode Tc = 150° C 15 A Per device Tc = 145° C 30 TOP3I Per diode Tc = 125° C 15 Per device Tc = 105° C 30 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 180 A Tstg Storage temperature range -65 to +175 ° C Tj Maximum operating junction temperature 175 ° C Table 2. Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AB, TO-247, I2PAK, D2PAK Per diode 1.5 ° C/W Total 1.0 TOP3I Per diode 3.5 Total 2.3 Rth(c) Coupling TO-220AB, TO-247, I2PAK, D2PAK 0.5 TOP3I 1.1 |
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