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STB120NF10 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB120NF10 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 15 page STW120NF10 - STP120NF10 - STB120NF10 Electrical ratings 3/15 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 110 A ID Drain current (continuous) at TC=100°C 77 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 440 A PTOT Total dissipation at TC = 25°C 312 W Derating factor 2.08 W/°C dv/dt (2) 2. ISD < 120A, di/dt < 300A/µs, VDD = 80%V(BR)DSS Peak diode recovery voltage slope 10 V/ns EAS (3) 3. Starting Tj = 25°C, ID = 60A, VDD = 50V Single pulse avalanche energy 550 mJ TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C TL Maximum lead temperature for soldering purpose 300 °C Table 2. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.48 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W |
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