Manufacturer | Part # | Datasheet | Description |
Motorola, Inc |
MFE212
|
496Kb / 5P |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
Digitron Semiconductors |
MFE211
|
1Mb / 5P |
N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
|
New Jersey Semi-Conduct... |
MFE211
|
98Kb / 2P |
N-. HANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
Toshiba Semiconductor |
RFM03U3P
|
274Kb / 6P |
Field Effect Transistors Silicon N-Channel MOS
|
RFM06U3X
|
297Kb / 6P |
Field Effect Transistors Silicon N-Channel MOS
|
Digitron Semiconductors |
3N209
|
820Kb / 5P |
N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS
|
Renesas Technology Corp |
2SK1493
|
589Kb / 11P |
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS
1993 |
2SK1495
|
592Kb / 11P |
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS
1993 |
NXP Semiconductors |
BC264A
|
294Kb / 6P |
N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS
December 1990 |
BF510
|
37Kb / 7P |
N-channel silicon field-effect transistors
December 1997 |