C-313

Revision 1

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

—

—

0.77

Case-to-Sink, flat, greased surface

—

0.50

—

°C/W

Junction-to-Ambient, typical socket mount

—

—

80

Wt

Weight

—

2 (0.07)

—

g (oz)

IRGBC40M

Short Circuit Rated

Fast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to

10kHz)

E

C

G

n-channel

Absolute Maximum Ratings

Parameter

Max.

Units

Collector-to-Emitter Voltage

600

V

Continuous Collector Current

40

Continuous Collector Current

24

A

Pulsed Collector Current

80

Clamped Inductive Load Current

80

Short Circuit Withstand Time

10

µs

Gate-to-Emitter Voltage

±20

V

Reverse Voltage Avalanche Energy

15

mJ

Maximum Power Dissipation

160

W

Maximum Power Dissipation

65

Operating Junction and

-55 to +150

Storage Temperature Range

°C

Soldering Temperature, for 10 sec.

300 (0.063 in. (1.6mm) from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Preliminary Data Sheet PD - 9.1074

Thermal Resistance

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

These new short circuit rated devices are especially suited for motor control

and other applications requiring short circuit withstand capability.

Description

TO-220AB