75N75

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R502-097,A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

75

V

75

A

Continuous Drain Current

56

A

Drain Current Pulsed (Note 1)

300

A

Gate to Source Voltage

±

20

V

Single Pulsed (Note 2)

900

mJ

Avalanche Energy

Repetitive (Note 1)

300

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

15

V/ns

220

W

Total Power Dissipation

Derating above 25℃

1.4

W/℃

Junction Temperature

+150

℃

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Thermal Resistance Junction-Ambient

62.5

℃

/W

Thermal Resistance Junction-Case

0.8

℃

/W

Thermal Resistance Case-Sink

0.5

℃

/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Off Characteristics

Drain-Source Breakdown Voltage

75

V

Breakdown Voltage Temperature

Coefficient

BV

△

Referenced to 25℃

0.08

V/℃

20

µA

Drain-Source Leakage Current

250

µA

Gate-Source Leakage Current

100

nA

Gate-Source Leakage Reverse

-100

nA

On Characteristics

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State

Resistance

12.5

15

mΩ

Dynamic Characteristics

Input Capacitance

3300

pF

Output Capacitance

530

pF

Reverse Transfer Capacitance

f = 1MHz

80

pF

Switching Characteristics

Turn-On Delay Time

12

ns

Rise Time

79

ns

Turn-Off Delay Time

80

ns

Fall Time

52

ns

Total Gate Charge

90

140

nC

Gate-Source Charge

20

35

nC

Gate-Drain Charge (Miller Charge)

30

45

nC