AS4CM4EOQ datasheet(6/16 Pages) ALSC

Part #	AS4CM4EOQ

Description	4M X 4 CMOS Quad CAS DRAM (EDO) family

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Manufacturer	ALSC [Alliance Semiconductor Corporation]

Direct Link	https://www.alliancememory.com

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6 / 16 page

AS4C4M4EOQ

AS4C4M4E1Q

®

3/22/01; v.1.0

Alliance Semiconductor

P. 6 of 16

AC parameters common to all waveforms

Read cycle

Symbol Parameter

-50

-60

Unit

Notes

Min

Max

Min

Max

tRC

Random read or write cycle time

80

–

100

–

ns

tRP

RAS precharge time

30

–

40

–

ns

tRAS

RAS pulse width

50

10K

60

10K

ns

tCAS

CAS pulse width

8

10K

10

10K

ns

tRCD

RAS to CAS delay time

15

35

15

43

ns

6

tRAD

RAS to column address delay time

12

25

12

30

ns

7

tRSH

CAS to RAS hold time

10

–

10

–

ns

tCSH

RAS to CAS hold time

40

–

50

–

ns

tCRP

CAS to RAS precharge time

5

–

5

–

ns

tASR

Row address setup time

0

–

0

–

ns

tRAH

Row address hold time

8

–

10

–

ns

tT

Transition time (rise and fall)

1

50

1

50

ns

4,5

tREF

Refresh period

–

32/64

–

32/64

ms

17/16

tCP

CAS precharge time

8

–

10

–

ns

tRAL

Column address to RAS lead time

25

–

30

–

ns

tASC

Column address setup time

0

–

0

–

ns

tCAH

Column address hold time

8

10

–

ns

Symbol Parameter

-50

-60

Unit

Notes

Min

Max

Min

Max

tRAC

Access time from RAS

–50

–

60

ns

6

tCAC

Access time from CAS

–

12

–

15

ns

6,13

tAA

Access time from address

–

25

–

30

ns

7,13

tRCS

Read command setup time

0

–

0

–

ns

tRCH

Read command hold time to CAS

0–

ns

9

tRRH

Read command hold time to RAS

0–

ns

9

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