MRF1518T1 datasheet(2/20 Pages) FREESCALE

Part #	MRF1518T1

Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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RF Device Data

Freescale Semiconductor

MRF1518T1

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Current

(VDS = 40 Vdc, VGS = 0 Vdc)

IDSS

—

1

μAdc

Gate-Source Leakage Current

(VGS = 10 Vdc, VDS = 0 Vdc)

IGSS

—

1

μAdc

On Characteristics

Gate Threshold Voltage

(VDS = 12.5 Vdc, ID = 100 μA)

VGS(th)

1.0

1.6

2.1

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 1 Adc)

VDS(on)

—

0.4

—

Vdc

Dynamic Characteristics

Input Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Ciss

—

66

—

pF

Output Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Coss

—

33

—

pF

Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Crss

—

4.5

—

pF

Functional Tests (In Freescale Test Fixture)

Common-Source Amplifier Power Gain

(VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)

Gps

10

11

—

dB

Drain Efficiency

(VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz)

η

50

55

—

%

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MRF1518T1 Datasheet(PDF) 2 Page - Freescale Semiconductor, Inc

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