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5N60 Datasheet(PDF) 3 Page - Unisonic Technologies |
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5N60 Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 6 page 5N60 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-065,B ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.5 A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 4.5 A Maximum Pulsed Drain-Source Diode Forward Current ISM 18 A Reverse Recovery Time tRR 300 ns Reverse Recovery Charge QRR VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/µs (Note 4) 2.2 µC Note 1. Repetitive Rating : Pulse width limited by TJ 2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25℃ 3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25℃ 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature |
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