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TSFF5210 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # TSFF5210
Description  High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSFF5210 Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 81090
Rev. 1.5, 28-Nov-06
TSFF5210
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
V
IF = 1 A, tp = 100 µs
VF
2.3
3.0
V
Temp. coefficient of VF
IF = 100 mA
TKVF
- 2.1
mV/K
Reverse current
VR = 5 V
IR
10
µA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
125
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
90
180
450
mW/sr
IF = 1 A, tp = 100 µs
Ie
1800
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
φ
e
50
mW
Temp. coefficient of
φ
e
IF = 100 mA
TK
φ
e
- 0.35
%/K
Angle of half intensity
ϕ
± 10
deg
Peak wavelength
IF = 100 mA
λ
p
870
nm
Spectral bandwidth
IF = 100 mA
Δλ
40
nm
Temp. coefficient of
λ
p
IF = 100 mA
TK
λ
p
0.25
nm/K
Rise time
IF = 100 mA
tr
15
ns
Fall time
IF = 100 mA
tf
15
ns
Cut-off frequency
IDC = 70 mA, IAC = 30 mA pp
fc
23
MHz
Virtual source diameter
3.7
mm
Figure 1. Power Dissipation vs. Ambient Temperature
0
50
100
150
200
250
300
10
20 30 40 50 60 70 8090
0
100
T
amb - Ambient Temperature (°C)
16647
R
thJA
Figure 2. Forward Current vs. Ambient Temperature
0
25
50
75
100
125
150
175
200
10
20 30 40 50 60 70 8090
0
100
T
amb - Ambient Temperature (°C)
16964
R
thJA


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