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BUJ304A Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BUJ304A
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 2 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ304A
STATIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES,ICBO
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
-
0.2
mA
V
BE = 0 V; VCE = VCESMmax;
-
-
0.5
mA
T
j = 125 ˚C
I
CEO
Collector cut-off current Emitter
V
CEO = VCEOMAX(500V)
-
-
0.1
mA
I
EBO
cut-off current
V
EB = 9 V; IC = 0 A
-
-
1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 10 mA;
500
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 4 A; IB = 0.8 A
-
0.3
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 4 A; IB = 0.8 A
-
1.0
1.3
V
h
FE
DC current gain
I
C = 5 mA; VCE = 5 V
10
17
34
h
FE
I
C = 500 mA;VCE = 5 V
14
22
35
h
FESAT
I
C = 4 A; VCE = 5 V
8
11
15
DYNAMIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 5.0 A; IBon = -IBoff = 1.0 A;
R
L = 75 ohms; VBB2 = 4 V;
t
on
Turn-on time
0.8
1.0
µs
t
s
Turn-off storage time
2.1
3.0
µs
t
f
Turn-off fall time
375
527
ns
Switching times (inductive load)
I
Con = 5.0 A; IBon = 1.0 A; LB = 1 µH;
-V
BB = 5 V
t
s
Turn-off storage time
1.45
1.7
µs
t
f
Turn-off fall time
25
50
ns
Switching times (inductive load)
I
Con = 5.0 A; IBon = 1.0 A; LB = 1 µH;
-V
BB = 5 V; Tj = 100 ˚C
t
s
Turn-off storage time
1.64
2.2
µs
t
f
Turn-off fall time
40
100
ns
1 Measured with half sine-wave voltage (curve tracer).
March 1999
2
Rev 1.000




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