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IRL3705NSPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRL3705NSPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 10 page IRL3705NS/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 46A, VGS = 0V trr Reverse Recovery Time 94 140 ns TJ = 25°C, IF = 46A Qrr Reverse Recovery Charge 290 440 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics S D G A 89 310 Pulse width ≤ 300µs; duty cycle ≤ 2%. Notes:
Uses IRL3705N data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. I SD ≤ 46A, di/dt ≤ 250A/µs, V DD ≤ V(BR)DSS, TJ ≤ 175°C VDD = 25V, starting TJ = 25°C, L = 320µH RG = 25Ω, IAS = 46A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.056 V/°C Reference to 25°C, ID = 1mA
0.010 VGS = 10V, ID = 46A 0.012 Ω VGS = 5.0V, ID = 46A 0.018 VGS = 4.0V, ID = 39A VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 50 S VDS = 25V, ID = 46A
25 VDS = 55V, VGS = 0V 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 nA VGS = 16V Gate-to-Source Reverse Leakage -100 VGS = -16V Qg Total Gate Charge 98 ID = 46A Qgs Gate-to-Source Charge 19 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge 49 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time 12 VDD = 28V tr Rise Time 140 ID = 46A td(off) Turn-Off Delay Time 37 RG = 1.8Ω, VGS = 5.0V tf Fall Time 78 RD = 0.59Ω, See Fig. 10
Between lead, and center of die contact Ciss Input Capacitance 3600 VGS = 0V Coss Output Capacitance 870 pF VDS = 25V Crss Reverse Transfer Capacitance 320 = 1.0MHz, See Fig. 5
nH IGSS RDS(on) Static Drain-to-Source On-Resistance LS Internal Source Inductance 7.5 ns IDSS Drain-to-Source Leakage Current µA Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 |
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