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BUJ105AX Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUJ105AX Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collector-emitter voltage peak value V BE = 0 V - 700 V V CBO Collector-Base voltage (open emitter) - 700 V V CEO Collector-emitter voltage (open base) - 400 V I C Collector current (DC) - 8 A I CM Collector current peak value - 16 A P tot Total power dissipation T hs ≤ 25 ˚C - 32 W V CEsat Collector-emitter saturation voltage I C = 4.0 A;IB = 0.8 A 0.3 1.0 V h FEsat I C = 4.0 A; VCE = 5 V 11 15 t f Fall time I C = 5 A; IB1 = 1.0A 20 50 ns PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 base 2 collector 3 emitter case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collector to emitter voltage V BE = 0 V - 700 V V CEO Collector to emitter voltage (open base) - 400 V V CBO Collector to base voltage (open emitter) - 700 V I C Collector current (DC) - 8 A I CM Collector current peak value - 16 A I B Base current (DC) - 4 A I BM Base current peak value - 8 A P tot Total power dissipation T hs ≤ 25 ˚C - 32 W T stg Storage temperature -65 150 ˚C T j Junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R th j-hs Junction to mounting base With heatsink compound - 3.95 K/W R th j-a Junction to ambient in free air 55 - K/W 12 3 case b c e February 1999 1 Rev 1.000 |
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