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HY27US08281A Datasheet(PDF) 3 Page - Hynix Semiconductor |
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HY27US08281A Datasheet(HTML) 3 Page - Hynix Semiconductor |
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3 / 44 page  Rev 0.6 / Nov. 2005 3 HY27US(08/16)281A Series 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash FEATURES SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities SUPPLY VOLTAGE - 3.3V device: VCC = 2.7 to 3.6V : HY27USXX281A Memory Cell Array = (512+16) Bytes x 32 Pages x 1,024 Blocks = (256+8) Words x 32 pages x 1,024 Blocks PAGE SIZE - x8 device : (512 + 16 spare) Bytes : HY27US08281A - x16 device: (256 + 8 spare) Words : HY27US16281A BLOCK SIZE - x8 device: (16K + 512 spare) Bytes - x16 device: (8K + 256 spare) Words PAGE READ / PROGRAM - Random access: 10us (max.) - Sequential access: 3.3V device: 50ns (min.) - Page program time: 200us (typ.) COPY BACK PROGRAM MODE - Fast page copy without external buffering FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - Manufacturer Code - Device Code CHIP ENABLE DON'T CARE OPTION - Simple interface with microcontroller AUTOMATIC PAGE 0 READ AT POWER-UP OPTION - Boot from NAND support - Automatic Memory Download SERIAL NUMBER OPTION HARDWARE DATA PROTECTION - Program/Erase locked during Power transitions DATA INTEGRITY - 100,000 Program/Erase cycles - 10 years Data Retention PACKAGE - HY27US(08/16)281A-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm) - HY27US(08/16)281A-T (Lead) - HY27US(08/16)281A-TP (Lead Free) - HY27US(08/16)281A-S(P) : 48-Pin USOP1 (12 x 17 x 0.65 mm) - HY27US(08/16)281A-S (Lead) - HY27US(08/16)281A-SP (Lead Free) |
Similar Part No. - HY27US08281A |
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Similar Description - HY27US08281A |
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