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BUJ105AB Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BUJ105AB
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 3 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ105AB
Fig.1. Test circuit for V
CEOsust.
Fig.2. Oscilloscope display for V
CEOsust.
Fig.3. Test circuit resistive load. V
IM = -6 to +8 V
V
CC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
R
B and RL calculated from ICon and IBon requirements.
Fig.4. Switching times waveforms with resistive load.
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH
Fig.6. Switching times waveforms with inductive load.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
IC
IB
10 %
10 %
90 %
90 %
ton
toff
ts
tf
IBon
-IBoff
ICon
tr
30ns
VCE / V
min
VCEOsust
IC / mA
10
100
250
0
LB
IBon
-VBB
LC
T.U.T.
VCC
tp
T
VCC
R
R
T.U.T.
0
VIM
B
L
IC
IB
ICon
IBon
-IBoff
t
t
ts
tf
toff
10 %
90 %
October 2001
3
Rev 1.000




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