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BUJ105AB Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BUJ105AB
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ105AB
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D
2-PAK) surface-mount
package intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching
regulators, motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
700
V
V
CBO
Collector-Base voltage (open emitter)
-
700
V
V
CEO
Collector-emitter voltage (open base)
-
400
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
16
A
P
tot
Total power dissipation
T
mb ≤ 25 ˚C
-
125
W
V
CEsat
Collector-emitter saturation voltage
I
C = 4.0 A;IB = 0.8 A
0.3
1.0
V
h
FEsat
I
C = 4.0 A; VCE = 5 V
11
15
t
f
Fall time
I
C = 5 A; IB1 = 1 A
20
50
ns
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
mb
collector
LIMITING VALUES8
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector to emitter voltage
V
BE = 0 V
-
700
V
V
CEO
Collector to emitter voltage (open base)
-
400
V
V
CBO
Collector to base voltage (open emitter)
-
700
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
16
A
I
B
Base current (DC)
-
4
A
I
BM
Base current peak value
-
8
A
P
tot
Total power dissipation
T
mb ≤ 25 ˚C
-
125
W
T
stg
Storage temperature
-65
150
˚C
T
j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to mounting
-
1.0
K/W
base
R
th j-a
Thermal resistance junction to ambient
minimum footprint, FR4 board
55
-
K/W
13
mb
2
b
c
e
October 2001
1
Rev 1.000




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