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BUJ103 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUJ103 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  August 1998 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A Fig.1. Test circuit for V CEOsust. Fig.2. Oscilloscope display for V CEOsust. Fig.3. Test circuit resistive load. V IM = -6 to +8 V V CC = 250 V; tp = 20 µs; δ = tp / T = 0.01. R B and RL calculated from ICon and IBon requirements. Fig.4. Switching times waveforms with resistive load. Fig.5. Test circuit inductive load. V CC = 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH Fig.6. Switching times waveforms with inductive load. + 50v 100-200R Horizontal Vertical Oscilloscope 1R 6V 30-60 Hz 300R IC IB 10 % 10 % 90 % 90 % ton toff ts tf IBon -IBoff ICon tr 30ns VCE / V min VCEOsust IC / mA 100 200 250 0 LB IBon -VBB LC T.U.T. VCC tp T VCC R R T.U.T. 0 VIM B L IC IB ICon IBon -IBoff t t ts tf toff 10 % 90 % |
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