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70N06 Datasheet(PDF) 6 Page - Unisonic Technologies |
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70N06 Datasheet(HTML) 6 Page - Unisonic Technologies |
6 / 8 page 70N06 MOSFET UNISONICTECHNOLOGIESCO.,LTD 6 of 8 www.unisonic.com.tw QW-R502-089,A TYPICAL CHARACTERISTICS 10 2 10 1 10 0 10 1 10-1 100 Drain-Source Voltage , VDS (V) On-State Characteristics 10 2 10 1 10 0 2 Gate -Source Voltage , VGS (V) Transfer Characteristics 46 8 10 35 7 9 V GS Top : 15V 10 V 8 V 7 V 6 V 5 .5V 5V Bottorm :4.5V 4.5V Note: 1. VDS =25V 2. 20µs Pulse Test 11 0 Drain Current, ID (A) 30 70 80 12 13 14 15 On-Resistance Variation vs. Drain Current and Gate Voltage 10 2 10 1 100 0.2 Source-Drain Voltage, VSD (V) Reverse Drain Current vs. Allowable Case Temperature 1.6 0.4 0.6 0.8 1.0 1.2 1.4 10 50 100 *Note: 1. VGS=0V 2. 250µs Test 25℃ 150℃ VGS=10V 20 40 60 90 4000 0 5 Drain-Source Voltage, VDC (V) Capacitance Characteristics (Non-Repetitive) 1000 2000 10 0 Total Gate Charge, QG (nC) 5 15 20 25 8 10 12 Gate Charge Characteristics 10 6 4 2 0 25 6000 CISS COSS 3000 5000 15 20 30 35 *Note: 1. VGS=0V 2. f = 1MHz CRSS 30 35 40 45 VDS=60V VDS=38V *Note: ID=48A CISS=CGS+CGD (CDS=shorted) COSS=CDS+CGD CRSS=CGD |
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