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74AUP1G86GM Datasheet(PDF) 9 Page - NXP Semiconductors |
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74AUP1G86GM Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 17 page 74AUP1G86_2 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 02.00 — 16 May 2006 9 of 17 Philips Semiconductors 74AUP1G86 Low-power 2-input EXCLUSIVE-OR gate [1] All typical values are measured at nominal VCC. [2] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ(C L × VCC 2 × f o) = sum of the outputs. Tamb = 25 °C CPD power dissipation capacitance f = 1 MHz; VI = GND to VCC [2] VCC = 0.8 V - 2.7 - pF VCC = 1.1 V to 1.3 V - 2.9 - pF VCC = 1.4 V to 1.6 V - 3.0 - pF VCC = 1.65 V to 1.95 V - 3.1 - pF VCC = 2.3 V to 2.7 V - 3.6 - pF VCC = 3.0 V to 3.6 V - 4.2 - pF Table 8: Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8 Symbol Parameter Conditions Min Typ [1] Max Unit Table 9: Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8 Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Max Min Max CL = 5 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay A or B to Y see Figure 7 VCC = 1.1 V to 1.3 V 2.1 14.3 2.1 15.8 ns VCC = 1.4 V to 1.6 V 1.6 8.8 1.6 9.7 ns VCC = 1.65 V to 1.95 V 1.4 6.9 1.4 7.6 ns VCC = 2.3 V to 2.7 V 1.1 5.3 1.1 5.9 ns VCC = 3.0 V to 3.6 V 0.9 4.7 0.9 5.2 ns CL = 10 pF tPHL, tPLH HIGH-to-LOW and LOW-to-HIGH propagation delay A or B to Y see Figure 7 VCC = 1.1 V to 1.3 V 2.4 16.2 2.4 17.9 ns VCC = 1.4 V to 1.6 V 1.9 10.0 1.9 11.0 ns VCC = 1.65 V to 1.95 V 1.7 8.0 1.7 8.8 ns VCC = 2.3 V to 2.7 V 1.4 6.2 1.4 6.9 ns VCC = 3.0 V to 3.6 V 1.3 5.6 1.3 6.2 ns |
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