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BU505 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BU505 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 1997 Aug 13 4 Philips Semiconductors Product specification Silicon diffused power transistors BU505; BU505D CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Measured with a half-sinewave voltage (curve tracer). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCEOsust collector-emitter sustaining voltage see Figs 5 and 6 700 −− V VCEsat collector-emitter saturation voltage IC = 2 A; IB = 900 mA −− 1V VBEsat base-emitter saturation voltage IC = 2 A; IB = 900 mA −− 1.3 V VEBO emitter-base voltage IE = 10 mA; IC =0 − 6 − V VF diode forward voltage (BU505D) IF =2A −− 1.8 V ICES collector-emitter cut-off current VCE =VCESmax; VBE =0; note 1 −− 0.15 mA VCE =VCESmax; VBE =0; Tj = 125 °C; note 1 −− 1mA IEBO emitter-base cut-off current VEB =5V; IC =0 −− 1mA hFE DC current gain VCE =5V; IC = 100 mA 6 13 30 fT transition frequency VCE =5V; IC = 100 mA; f=5MHz − 7 − MHz Cc collector capacitance VCB = 10 V; IE =ie =0; f=1MHz − 65 − pF Switching times in horizontal deflection circuit (see Fig.7) ts storage time ICM = 2 A; IB(end) = 900 mA; Vdr = −4V LB =10 µH − 6.5 −µs LB =15 µH − 7.5 −µs LB =25 µH − 9.5 −µs tf fall time ICM = 2 A; IB(end) = 900 mA; Vdr = −4V LB =10 µH − 0.9 −µs LB =15 µH − 0.9 −µs LB =25 µH − 0.85 −µs |
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