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BU4525AL Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BU4525AL
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 2 page
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Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525AL
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
-
-
1.0
K/W
R
th j-a
Junction to ambient
in free air
45
-
K/W
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
I
EBO
Emitter cut-off current
V
BE = 7.5 V; IC = 0 A
-
-
1.0
mA
BV
EBO
Emitter-base breakdown voltage
I
B = 1 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
800
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 9.0 A;IB = 2.25 A;
-
-
3.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 9.0 A;IB = 2.25 A;
t.b.f
-
1.1
V
h
FE
DC current gain
I
C = 1A; VCE = 5 V
-
t.b.f
-
h
FE
I
C = 9 A; VCE = 5 V
4.2
5.35
6.5
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E = 0 A; VCB = 10 V; f = 1 MHz
145
-
pF
Switching times (16 kHz line
I
Csat = 9.0 A;IB1 = 1.8 A;
deflection circuit)
(I
B2 = -4.5 A)
t
s
Turn-off storage time
t.b.f
t.b.f
µs
t
f
Turn-off fall time
t.b.f
t.b.f
µs
Switching times (70kHz line
I
Csat = 7.5 A;IB1 = 1.5 A
deflection circuit)
(I
B2 = -4.5 A)
t
s
Turn-off storage time
t.b.f
t.b.f
µs
t
f
Turn-off fall time
t.b.f
t.b.f
µs
2 Measured with half sine-wave voltage (curve tracer).
January 1998
2
Rev 1.000




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