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BU4525AL Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BU4525AL
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
12
A
I
CM
Collector current peak value
-
30
A
P
tot
Total power dissipation
T
mb ≤ 25 ˚C
-
125
W
V
CEsat
Collector-emitter saturation voltage
I
C = 9.0 A; IB = 2.25A
-
3.0
V
I
Csat
Collector saturation current
f= 16 kHz
8.0
-
A
f= 70 kHz
7.5
-
A
t
f
Fall time
I
Csat = 9.0 A; f = 16 kHz
t.b.f
t.b.f
µs
I
Csat = 7.5 A; f = 70 kHz
t.b.f
t.b.f
µs
PINNING - SOT430
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
heat
collector
sink
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
12
A
I
CM
Collector current peak value
-
30
A
I
B
Base current (DC)
-
8
A
I
BM
Base current peak value
-
12
A
-I
BM
Reverse base current peak value
1
-7
A
P
tot
Total power dissipation
T
mb
25 ˚C
-
125
W
T
stg
Storage temperature
-55
150
˚C
T
j
Junction temperature
-
150
˚C
12
3
b
c
e
1 Turn-off current.
January 1998
1
Rev 1.000




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