UF640L-TA3-T datasheet(3/5 Pages) UTC

Part #	UF640L-TA3-T

Description	18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET

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Manufacturer	UTC [Unisonic Technologies]

Direct Link	http://www.utc-ic.com

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3 / 5 page

UF640

MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

Ver.A

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Measured

From the

Contact Screw

on Tab to

Center of Die

3.5

nH

Internal Drain Inductance

LD

Measured

From the Drain

Lead, 6mm

(0.25in) From

Package to

Center of Die

4.5

nH

Internal Source Inductance

LS

Measured

From the

Source Lead,

6mm (0.25in)

from Header to

Source

Bonding Pad

Modified MOSFET Symbol

Showing the Internal

Devices Inductances

G

S

D

LD

LS

7.5

nH

SOURCE TO DRAIN DIODE SPECIFICATIONS

Diode Forward Voltage (Note 1)

VSD

TJ = 25℃, IS = 18A, VGS = 0V,

2.0

V

Continuous Source Current (body

diode)

IS

18

A

Pulse Source Current (body diode)

(Note 1)

ISM

Integral Reverse p-n Junction

Diode in the MOSFET

Gate

Sourse

Drain

72

A

Reverse Recovery Time

tRR

TJ = 25℃, IS = 18A,

dIS/dt = 100A/µs

120

240

530

ns

Reverse Recovery Charge

QRR

TJ = 25℃, IS = 18A,

dIS/dt = 100A/µs

1.3

2.8

5.6

µC

Note 1. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

2. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance

curve.

3. L = 3.37mH, VDD = 50V, RG = 25Ω, peak IAS = 18A, starting TJ = 25℃.

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