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BU4508DF Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BU4508DF
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 2 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤ 65 % ; clean and dustfree
-
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
BV
EBO
Emitter-base breakdown voltage
I
B = 600 mA
7.5
13.5
-
V
R
be
Base-emitter resistance
V
EB = 6 V
-
25
-
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 100 mA;
800
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltages I
C = 5.0 A; IB = 1.25 A
-
-
3.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 5.0 A; IB = 1.25 A
0.85
0.94
1.03
V
h
FE
DC current gain
I
C = 500 mA; VCE = 5 V
-
7
-
h
FE
I
C = 5.0 A; VCE = 5 V
4.2
5.7
7.3
V
F
Diode forward voltage
I
F = 5 A
-
1.85
2.2
V
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (16 kHz line
I
Csat = 5.0 A; IB1 = 1.0 A;(IB2 = -2.5 A)
deflection circuit)
t
s
Turn-off storage time
2.75
3.75
µs
t
f
Turn-off fall time
300
400
ns
V
fr
Anti-parallel diode forward recovery
I
F = 4 A; dIF/dt = 50 A/µs19
-
V
voltage
t
fr
Anti-parallel diode forward recovery
V
F = 5 V
500
-
ns
time
2 Measured with half sine-wave voltage (curve tracer).
February 1999
2
Rev 1.000




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