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BU4508DF Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BU4508DF
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 4 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4508DF
Fig.7. Typical collector-emitter saturation voltage.
Fig.8. Typical base-emitter saturation voltage.
Fig.9. Typical collector storage and fall time.
I
C =5 A; Tj = 85˚C; f = 16kHz
Fig.10. Normalised power dissipation.
PD% = 100
⋅P
D/PD 25˚C
Fig.11. Transient thermal impedance.
0.1
1
10
100
0.01
0.1
1
10
IC / A
VCESAT \ V
Ths = 25 C
Ths = 85 C
BU4508DF/X/Z
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
01
23
4
0.6
0.7
0.8
0.9
1
1.1
1.2
IB / A
VBESAT / V
Ths = 25 C
Ths = 85 C
IC = 5 A
BU4508DF/X/Z
1.0E-07
1.0E-05
1.0E-03
1.0E-01
1.0E+01
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
BU4508AF
t / s
Zth K/W
D =
tp
tp
T
T
P
t
D
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
IB / A
ts/tf/ us
ICsat = 5 A
Ths = 85 C
Freq = 16 kHz
BU4508D ts/tf
February 1999
4
Rev 1.000




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