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H7N0608LD, H7N0608LS, H7N0608LM Rev.1.00, Oct.30.2003, page 3 of 11 Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0 Gate to source breakdown Voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS —— ±10 µAVGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS ——10 µAVDS = 60 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1 mA, VDS = 10 V Note1 Static drain to source on state RDS(on) —6.0 8.0 m Ω ID = 35 A, VGS = 10 V Note1 resistance — 8.0 12 m Ω ID = 35 A, VGS = 4.5 V Note1 Forward transfer admittance |yfs| 4575— S ID = 35 A, VGS = 10 V Note1 Input capacitance Ciss — 6200 — pF VDS = 10 V Output capacitance Coss — 680 — pF VGS = 0 Reverse transfer capacitance Crss — 350 — pF f = 1 MHz Total gate charge Qg — 100 — nC VDD = 25 V Gate to source charge Qgs — 20 — nC VGS = 10 V Gate to drain charge Qgd — 20 — nC ID = 70 A Turn-on delay time td(on) —45 — ns VGS = 10 V, ID = 35 A Rise time tr — 220 — ns RL = 0.86 Ω Turn-off delay time td(off) — 125 — ns Rg = 4.7 Ω Fall time tf —35 — ns Body–drain diode forward voltage VDF —0.94 — V IF = 70 A, VGS = 0 Body–drain diode reverse recovery time trr —40 — ns IF = 70 A, VGS = 0 diF/dt = 100 A/ µs Notes: 1. Pulse test |
