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BU2730AL Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BU2730AL
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 2 page
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Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2730AL
STATIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
I
EBO
Emitter cut-off current
V
EB = 7.5 V; IC = 0 A
-
-
1.0
mA
BV
EBO
Base-emitter breakdown voltage
I
B = 1 mA
7.5
14
-
V
V
CEsat
Collector-emitter saturation voltage
I
C = 9 A; IB = 1.8 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 9 A; IB = 1.8 A
-
0.91
V
h
FE
DC current gain
I
C = 1 A; VCE = 5 V
-
17
-
h
FE
I
C = 9 A; VCE = 5 V
5
7.5
9.5
DYNAMIC CHARACTERISTICS
T
mb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (32 kHz line
I
Csat = 9 A; LC = 200 µH; Cfb = 9 nF;
deflection dynamic test circuit).
V
CC = 142 V; IB(end) = tbf ; -IBM = 4.5 A;
-V
BB = 4 V; LB = 5 µH
t
s
Turn-off storage time
3.5
4.5
µs
t
f
Turn-off fall time
tbf
tbf
µs
2 Measured with half sine-wave voltage (curve tracer).
April 1997
2
Rev 1.000




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