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BU2730AL Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BU2730AL
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2730AL
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0
-
1700
V
V
CEO
Collector-emitter voltage (open base)
-
825
V
I
C
Collector current (DC)
-
16
A
I
CM
Collector current peak value
-
40
A
P
tot
Total power dissipation
T
mb ≤ 25 ˚C
-
125
W
V
CEsat
Collector-emitter saturation voltage
I
C = 9 A; IB = 1.8 A
-
5.0
V
I
Csat
Collector saturation current
f = 32 kHz
9
-
A
t
s
Storage time
I
Csat = 9 A;
f = 32 kHz
3.5
4.5
µs
PINNING - SOT430
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
heat
collector
sink
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1700
V
V
CEO
Collector-emitter voltage (open base)
-
825
V
I
C
Collector current (DC)
-
16
A
I
CM
Collector current peak value
-
40
A
I
B
Base current (DC)
-
10
A
I
BM
Base current peak value
-
15
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
200
mA
-I
BM
Reverse base current peak value
1
-10
A
P
tot
Total power dissipation
T
mb
25 ˚C
-
125
W
T
stg
Storage temperature
-55
150
˚C
T
j
Junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
-
-
1.0
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
12
3
b
c
e
1 Turn-off current.
April 1997
1
Rev 1.000




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