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BU2708DX Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. BU2708DX
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 3 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DX
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit.
Fig.4. DC current gain. h
FE = f (IC)
Parameter T
hs
(Low and high gain)
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
BU2708DF
0.01
0.1
1
10
100
1
10
100
hFE
IC / A
Ths = 25 C
Ths = 85 C
VCE = 5 V
September 1997
3
Rev 1.200




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