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BU2708DX Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BU2708DX
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 2 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DX
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
BV
EBO
Emitter-base breakdown voltage
I
B = 600 mA
7.5
13.5
-
V
R
BE
Base-emitter resistance
V
EB = 7.5 V
45
V
CEsat
Collector-emitter saturation voltage
I
C = 4 A; IB = 1.33 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 4 A; IB = 1.33 A
0.83
0.91
1.00
V
V
F
Diode forward voltage
I
F = 4 A
1.6
V
h
FE
DC current gain
I
C = 1 A; VCE = 5 V
-
15
-
h
FE
I
C = 4 A; VCE = 1 V
3
6
7.3
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (line deflection
I
Csat = 4 A; LC = 1 mH; CFB = 12.2 nF;
circuit 16 kHz)
V
CC = 120 V; IB(end) = 0.8 A; LB = 6 µH;
-V
BB = 4 V; -IBM = ICM/2
t
s
Turn-off storage time
4.8
5.5
µs
t
f
Turn-off fall time
0.4
0.52
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200




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