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BU2708DX Datasheet(PDF) 1 Page - NXP Semiconductors

Part No. BU2708DX
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.
Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to
base drive and collector current load variations resulting in a low worst case dissipation. Designed to withstand V
CES
pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1700
V
V
CEO
Collector-emitter voltage (open base)
-
825
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
P
tot
Total power dissipation
T
hs ≤ 25 ˚C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C = 4 A; IB = 1.33 A
-
1.0
V
I
Csat
Collector saturation current
f = 16 kHz
4.0
-
A
V
F
Diode forward voltage
I
F = 4.0 A
1.6
-
V
t
s
Storage time
I
Csat = 4 A; f = 16 kHz
4.8
5.5
µs
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE = 0 V
-
1700
V
V
CEO
Collector-emitter voltage (open base)
-
825
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
I
B
Base current (DC)
-
4
A
I
BM
Base current peak value
-
6
A
-I
BM
Reverse base current peak value
1
-5
A
P
tot
Total power dissipation
T
hs
25 ˚C
-
45
W
T
stg
Storage temperature
-65
150
˚C
T
j
Junction temperature
-
150
˚C
ESD LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor voltage Human body model (250 pF,
-
10
kV
1.5 k
Ω)
case
12 3
b
c
e
Rbe
1 Turn-off current.
September 1997
1
Rev 1.200




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