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BU2708DX Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. BU2708DX
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 5 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DX
Fig.11. Normalised power dissipation.
PD% = 100
⋅PD/PD 25˚C = f (T
hs)
Fig.12. Transient thermal impedance.
Z
th j-hs = f(t); parameter D = tp/T
Fig.13. Test Circuit RBSOA. V
CC = 150 V;
-V
BB = 1 - 4 V;
L
C = 1 mH; VCL = 1500 V; LB = 1 - 3 µH;
C
FB = 1 - 4 nF; IB(end) = 0.8 - 4 A
Fig.14. Reverse bias safe operating area. T
j ≤ Tjmax
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
1.0E-06
1E-04
1E-02
1E+00
0.001
0.01
0.1
1
10
0
0.2
0.1
0.05
0.02
0.5
BU2708AF/DF
tp / sec
Zth / K/W
D =
D =
tp
tp
T
T
P
t
D
100
1000
0
2
4
6
8
10
12
14
16
VCE / V
IC / A
BU2708AF/DF
Area where
Fails occur
1700
September 1997
5
Rev 1.200




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