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BU2708DX Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BU2708DX
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 4 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DX
Fig.5. DC current gain. h
FE = f (IC)
Parameter T
hs
(Low and high gain)
Fig.6. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
Fig.7. Typical base-emitter saturation voltage.
V
BEsat = f (IB); parameter IC
Fig.8. Limit P
tot;
T
j = 85˚C
P
tot = f (IB(end)); IC = 3.5 A; f = 16 kHz
Fig.9. Limit P
tot;
T
j = 85˚C
P
tot = f (IB(end)); IC = 4.0 A; f = 16 kHz
Fig.10. Limit storage and fall time.
t
s = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
0.01
0.1
1
10
100
1
10
100
hFE
BU2708DF
IC / A
Ths = 25 C
Ths = 85 C
VCE = 1 V
0
0.5
1
1.5
2
1
10
PTOT / W
BU2708AF/DF
IB / A
IC = 3.5 A
f = 16 kHz
Tj = 85 C
0.1
1
10
100
0.01
0.1
1
10
Tj = 85 C
Tj = 25 C
IC/IB = 8
IC/IB = 4
VCEsat / V
IC / A
BU2708DF
0
0.5
1
1.5
2
1
10
PTOT / W
BU2708AF/DF
IB / A
IC = 4 A
f = 16 kHz
Tj = 85 C
0
0.5
1
1.5
2
0.6
0.7
0.8
0.9
1
1.1
1.2
Tj = 25 C
Tj = 85 C
VBEsat / V
BU2708DF
IB / A
IC = 4A
3A
0
0.5
1
1.5
2
0
2
4
6
8
10
ts/tf / us
BU2708AF/DF
IC = 3.5A
IC = 4A
IB / A
September 1997
4
Rev 1.200




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