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CY7C1353-66AC Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY7C1353-66AC
Description  256Kx18 Flow-Through SRAM with NoBL Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1353-66AC Datasheet(HTML) 6 Page - Cypress Semiconductor

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CY7C1353
6
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature
..................................... −65°C to +150°C
Ambient Temperature with
Power Applied
.................................................. −55°C to +125°C
Supply Voltage on VDD Relative to GND ......... −0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[7]
.....................................−0.5V to V
DDQ + 0.5V
DC Input Voltage[7]
..................................−0.5V to V
DDQ + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Note:
7.
Minimum voltage equals
2.0V for pulse duration less than 20 ns.
8.
TA is the case temperature.
Interleaved Burst Sequence
First
Address
Second
Address
Third
Address
Fourth
Address
Ax+1, Ax
Ax+1, Ax
Ax+1, Ax
Ax+1, Ax
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Sequence
First
Address
Second
Address
Third
Address
Fourth
Address
Ax+1, Ax
Ax+1, Ax
Ax+1, Ax
Ax+1, Ax
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
Write Cycle Description[1, 2]
Function
WE
BWS1
BWS0
Read
1X
X
Write - No bytes written
0
1
1
Write Byte 0-(DQ[7:0] and DP0)
010
Write Byte 1-(DQ[15:8] and DP1)
001
Write All Bytes
0
0
0
Operating Range
Range
Ambient
Temperature[8]
VDD/VDDQ
Com’l
0
°C to +70°C
3.3V
±5%


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