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MF3129-LYCATXX Datasheet(PDF) 11 Page - Mitsubishi Electric Semiconductor |
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MF3129-LYCATXX Datasheet(HTML) 11 Page - Mitsubishi Electric Semiconductor |
11 / 14 page MITSUBISHI MEMORY CARD STATIC RAM CARDS MITSUBISHI ELECTRIC 11/14 Apr. 1999 Rev. 1.2 18. ELECTRICAL CHARACTERISTICS BATTERY BACKUP (Ta=0~55°C, unless otherwise noted) Symbol Parameter Test conditions Limits Unit Min. Typ. Max. VBATT Back-up enable battery voltage All pins open 2.6 V Vi (CE) Card enable voltage 3.5V ≤VCC≤5.25V 3.5 V 0V ≤VCC<3.5V Vcc-0.1 Vcc Vcc+0.1 64KB 3 128KB 3 All pins open, 256KB 3 Battery back-up supply current VBATT=3V, 512KB 5 µA Ta=25°C 1MB 3 2MB 5 Icc 4MB 9 (Bup) 64KB 30 128KB 30 All pins open, 256KB 30 Battery back-up supply current VBATT=3V 512KB 50 µA 1MB 30 2MB 50 4MB 90 19. TIMING REQUIREMENTS (Ta=0~55°C, unless otherwise noted) Symbol Parameter Limits Min. Typ. Max. Tpr Power supply rise time 0.1 300 ms tpf Power supply fall time 3 300 ms tsu(Vcc) Setup time at power on 20 ms trec(Vcc) Recovery time at power off 1000 ns CARD INSERTION/REMOVAL TIMING DIAGRAM VCC CE1#, CE2# trec(VCC) tpf 90% VIH 10% VCC CE1#, CE2# tsu(VCC) tpr 90% VIH 10% VCC MIN VCC MIN |
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