HY57V121620 datasheet(6/12 Pages) HYNIX

Part #	HY57V121620

Description	4 Banks x 8M x 16Bit Synchronous DRAM

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Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

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HY57V121620(L)T

Rev.0.3/Dec. 01

6

DC CHARACTERISTICS II (TA=0 to 70°C, VDD=3.3±0.3V, VSS=0V)

Note :

1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open

2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II

3.HY57V121620T-6/K/H/8/P/S

4.HY57V121620LT-6/K/H/8/P/S

Parameter

Symbol

Test Condition

Speed

Unit

Note

-6

-K

-H

-8

-P

-S

Operating Current

IDD1

Burst length=1, One bank active

tRC

≥ tRC(min), IOL=0mA

160

150

140

mA

1

Precharge Standby Current

in Power Down Mode

IDD2P

CKE

≤ VIL(max), tCK = 15ns

2

mA

IDD2PS

CKE

≤ VIL(max), tCK =

∞

2

Precharge Standby Current

in Non Power Down Mode

IDD2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCK = 15ns

Input signals are changed one time during

30ns. All other pins

≥ VDD-0.2V or ≤ 0.2V

30

mA

IDD2NS

CKE

≥ VIH(min), tCK =

∞

Input signals are stable.

10

Active Standby Current

in Power Down Mode

IDD3P

CKE

≤ VIL(max), tCK = 15ns

4

mA

IDD3PS

CKE

≤ VIL(max), tCK =

∞

4

Active Standby Current

in Non Power Down Mode

IDD3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCK = 15ns

Input signals are changed one time during

30ns. All other pins

≥ VDD-0.2V or ≤ 0.2V

50

mA

IDD3NS

CKE

≥ VIH(min), tCK =

∞

Input signals are stable.

35

Burst Mode Operating

Current

IDD4

tCK

≥ tCK(min), IOL=0mA

All banks active

210

200

190

mA

1

Auto Refresh Current

IDD5

tRRC

≥ tRRC(min), All banks active

310

300

290

mA

2

Self Refresh Current

IDD6

CKE

≤ 0.2V

6mA

3

3mA

4

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