11

2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM

Micron Technology, Inc., reserves the right to change products or specifications without notice.

MT58L128L18F_2.p65 – Rev. 6/01

©2000, Micron Technology, Inc.

2Mb: 128K x 18, 64K x 32/36

FLOW-THROUGH SYNCBURST SRAM

NOTE: 1. This parameter is sampled.

TQFP CAPACITANCE

DESCRIPTION

CONDITIONS

SYMBOL

TYP

MAX

UNITS

NOTES

Control Input Capacitance

2.7

3.5

p F

1

Input/Output Capacitance (DQ)

45

p F

1

Address Capacitance

2.5

3.5

p F

1

Clock Capacitance

2.5

3.5

p F

1

TQFP THERMAL RESISTANCE

DESCRIPTION

CONDITIONS

SYMBOL

TYP

UNITS NOTES

Thermal Resistance

Test conditions follow standard test methods

θ

JA

40

°C/W

1

(Junction to Ambient)

and procedures for measuring thermal

Thermal Resistance

impedance, per EIA/JESD51.

θ

JC

8

°C/W

1

(Junction to Top of Case)