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MT58L64V32FT-6.8 Datasheet(PDF) 11 Page - Micron Technology |
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MT58L64V32FT-6.8 Datasheet(HTML) 11 Page - Micron Technology |
11 / 24 page 11 2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM Micron Technology, Inc., reserves the right to change products or specifications without notice. MT58L128L18F_2.p65 – Rev. 6/01 ©2000, Micron Technology, Inc. 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM NOTE: 1. This parameter is sampled. TQFP CAPACITANCE DESCRIPTION CONDITIONS SYMBOL TYP MAX UNITS NOTES Control Input Capacitance TA = 25°C; f = 1 MHz; CI 2.7 3.5 p F 1 Input/Output Capacitance (DQ) VDD = 3.3V CO 45 p F 1 Address Capacitance CA 2.5 3.5 p F 1 Clock Capacitance CCK 2.5 3.5 p F 1 TQFP THERMAL RESISTANCE DESCRIPTION CONDITIONS SYMBOL TYP UNITS NOTES Thermal Resistance Test conditions follow standard test methods θ JA 40 °C/W 1 (Junction to Ambient) and procedures for measuring thermal Thermal Resistance impedance, per EIA/JESD51. θ JC 8 °C/W 1 (Junction to Top of Case) |
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