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BU2525DF Datasheet(PDF) 2 Page - NXP Semiconductors

Part No. BU2525DF
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 2 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
≤ 65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
I
EBO
Emitter cut-off current
V
EB = 6.0 V; IC = 0 A
72
110
218
mA
R
eb
Base-emitter resistance
V
EB = 6.0 V
-
55
-
BV
EBO
Emitter-base breakdown voltage
I
B = 600 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B=0A ;Ic = 100mA
800
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 8.0 A; IB = 1.6 A
-
-
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 8.0 A; IB = 1.6 A
-
-
1.1
V
h
FE
DC current gain
I
C = 1 A; VCE = 5 V
-
11
-
h
FE
I
C = 8 A; VCE = 5 V
5
7
9.5
V
F
Diode forward voltage
I
F = 8 A
-
1.6
2.0
V
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E = 0 A; VCB = 10 V; f = 1 MHz
145
-
pF
Switching times (32 kHz line
I
Csat = 8.0 A; LC = 260 µH; Cfb = 13 nF;
deflection circuit)
I
B(end) = 1.1 A; LB = 2.5 µH; -VBB = 4 V;
(-dI
B/dt = 1.6 A/µs)
t
s
Turn-off storage time
3.0
4.0
µs
t
f
Turn-off fall time
0.2
0.35
µs
V
fr
Anti-parallel diode forward recovery
I
F = 8 A; dIF/dt = 50 A/µs16
-
V
voltage
t
fr
Anti-parallel diode forward recovery
V
F = 5 V
410
-
ns
time
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200




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