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BU2525DF Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. BU2525DF
Description  Silicon Diffused Power Transistor
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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 4 page
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DF
Fig.7. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
Fig.8. Typical base-emitter saturation voltage.
V
BEsat = f (IB); parameter IC
Fig.9. Typical collector-emitter saturation voltage.
V
CEsat = f (IB); parameter IC
Fig.10. Typical turn-off losses. T
j = 85˚C
Eoff = f (I
B); parameter IC; f = 32 kHz
Fig.11. Typical collector storage and fall time.
ts = f (I
B); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
Fig.12. Normalised power dissipation.
PD% = 100
⋅P
D/PD 25˚C = f (Ths)
0.1
10
IC / A
VCESAT / V
BU2525AF
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
1
Tj = 25 C
Tj = 125 C
IC/IB =
4
5
3
0.1
1
10
IB / A
Eoff / uJ
BU2525AF
1000
100
10
IC = 8 A
7 A
0
1
2
3
4
IB / A
VBESAT / V
BU2525AF
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
8 A
6 A
5 A
4 A
0.1
1
10
IB / A
ts, tf / us
BU2525AF
12
11
10
9
8
7
6
5
4
3
2
1
0
32 kHz
ts
tf
IC =
8 A
7 A
0.1
1
10
IB / A
VCESAT / V
BU2525AF
10
1
0.1
Tj = 25 C
Tj = 125 C
IC = 4 A
5 A
6 A
8 A
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
September 1997
4
Rev 1.200




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