NE72118-T1 datasheet(1/4 Pages) NEC

Part #	NE72118-T1

Description	C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET

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Manufacturer	NEC [NEC]

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PART NUMBER

NE72118

PACKAGE OUTLINE

18

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

IGSO

Gate to Source Leak Current at VGS = -5 V

µA

1.0

10

IDSS

Saturated Drain Current at VDS = 3 V, VGS = 0 V

µA

30

60

100

VGS (OFF)

Gate to Source Cut off Voltage at VDS = 3 V, ID = 100

µA

V

-0.5

-2.0

-4.0

gm

Transconductance at VDS = 3 V, ID = 30 mA

mS

20

40

PN

Phase Noise at VDS=3 V, ID=30mA, f=11GHz,100KHz offset dBc/Hz

-110

Phase Noise at VDS=3 V, ID=30mA, f=11GHz, 10KHz offset dBc/Hz

-85

Gs

Power Gain at VDS = 3 V, ID = 30 mA, f = 12 GHz

dB

5.5

Po (1dB)

Output Power at 1 dB Gain Compression Point at

dBm

13.5

VCE = 3 V, ID = 30 mA, f = 12 GHz

NE72118

C TO X BAND AMPLIFIER

C TO X BAND OSC

N-CHANNEL GaAs MESFET

•

HIGH POWER GAIN:

Gs = 5.5 dB TYP at f = 12 GHz

•

GATE LENGTH: Lg = 0.8

µm (recessed gate)

•

GATE WIDTH: Wg = 330

µm

•

4 PINS SUPER MINI MOLD

•

TAPE & REEL PACKAGING

FEATURES

PACKAGE DIMENSIONS (Units in mm)

PACKAGE OUTLINE 18

PRELIMINARY DATA SHEET

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PIN CONNECTIONS

1. Source

2. Gate

3. Source

4. Drain

California Eastern Laboratories

2.1

± 0.2

1.25

± 0.1

DESCRIPTION

The NE72118 is a high performance gallium arsenide metal

semiconductor field effect transistor (MESFET), housed in a

low cost plastic surface mount package (SOT 23 style). This

device's low phase noise and high fT make it an excellent

choice for oscillator applications on a digital LNB (Low Noise

Block).

NEC's stringent quality assurance and test procedures ensure

the highest reliability performance.

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