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SYMBOL
PARAMETERS
RATING
UNITS
Absolute Maximum Ratings:
V
CEO
Collector-Emitter Voltage
28
V
V
EBO
Emitter-Base Voltage
3.5
V
I
C
Collector Current (instantaneous)
4.16
A
T
J
Junction Temperature
200
oC
T
STG
Storage Temperature
-65 to 200
oC
V
CBO
Collector-Base Voltage
50
V
SYMBOL
PARAMETERS & CONDITIONS
UNIT
MIN.
TYP.
MAX.
V
CE
=28V, I
C
=4.16 A, Class C
η
C
OB
Output Capacitance:
f = 1 MHz, I
E
= 0
pF
24
BIPOLARICS, INC
Part Number BMT1417B26
SILICON MICROWAVE POWER TRANSISTOR
PRODUCT DATA SHEET
θJC
Thermal Resistance
6.5
C/W
FEATURES:
• Common Base, Class C Package Configuration
• High Output Power
26 W @ 1.4 to 1.7 GHz
• High Gain Bandwidth Product
f
t
= 6.0 GHz @ I
C
= 4.16 A
• High Gain
GPE = 7.0 dB to 8.2 dB
• High Reliability
Gold Metallization
Nitride Passivation
• Diffused Ballast Resistors
• BeO Packaging
PERFORMANCE DATA:
• Electrical Characteristics (T
A
= 25
oC)
P
1dB
Power output at 1 dB compression:
f = 1.4 GHz
W
26
Collector Efficiency
Class C
%
50
h
FE
Forward Current Transfer Ratio: V
CB
= 5V, I
C
= 800 mA
10
---
100
P
T
Total Power Dissipation
W
52
• Built-In Matching Network
for Broadband Operation
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