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RA60H4047M1 Datasheet(PDF) 7 Page - Mitsubishi Electric Semiconductor

Part No. RA60H4047M1
Description  400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H4047M1
RA60H4047M1
MITSUBISHI ELECTRIC
25
th Oct 2006
7/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal
cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die
bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually
inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the
glass-epoxy substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the glass-epoxy substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Stage
Pin
(W)
Pout
(W)
Rth(ch-case)
(°C/W)
IDD @ ηT=40%
(A)
VDD
(V)
1
st
0.05
2.5
2.24
1.5
2
nd
2.5
60.0
0.45
10.5
12.5
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 1.5A – 2.5W + 0.05W) x 2.24°C/W = Tcase + 36.5 °C
Tch2 = Tcase + (12.5V x 10.5A – 60.0W + 2.5W) x 0.45°C/W = Tcase + 33.2 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=60W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) -
Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (60W/40% - 60W + 0.05W) = 0.33 °C/W
When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 66.5 °C
Tch2 = Tair + 63.2 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.




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