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RA60H4047M1 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. RA60H4047M1
Description  400-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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 3 page
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MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE
RA60H4047M1
RA60H4047M1
MITSUBISHI ELECTRIC
25
th Oct 2006
3/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
O U T PUT PO WER, T O T AL EFFICIENCY,
2
nd, 3rd HARM O NICS v e rsus FREQ UENCY
v e rsus FR EQ UENCY
IN PU T VSWR v e rsus FR EQ UENCY
G AT E CUR REN T v e rsus FR EQ UENCY
10
20
30
40
50
60
70
80
90
390 400 410 420 430 440 450 460 470 480
FRE QUE NCY f(M Hz )
V
DD =12.5V
V
GG=5 V
P
in=50m W
P
out
η
T
-80
-70
-60
-50
-40
-30
390 400 410 420 430 440 450 460 470 480
FRE QUE NCY f(M Hz)
V
DD =12.5V
V
GG=5 V
P
in=50m W
2nd
3
rd
1
2
3
4
5
390 400 410 420 430 440 450 460 470 480
FRE QUE NCY f(M Hz)
V
DD=12.5V
V
GG=5 V
P
in=50m W
ρ
in
0
1
2
3
4
5
6
7
8
390 400 410 420 430 440 450 460 470 480
FRE QUE NCY f(M Hz )
Ι
GG
V
DD=12.5V
V
GG=5 V
P
in=50m W
O U T PUT PO WER, PO WER G AIN and
O UT PU T PO WER, PO WER G AIN and
DRAIN CUR RENT v e rsus IN PU T PO WER
DRAIN CU RRENT v e rsus IN PU T PO WER
O U T PUT PO WER, PO WER G AIN and
O UT PU T PO WER, PO WER G AIN and
DRAIN CUR RENT v e rsus IN PU T PO WER
DRAIN CU RRENT v e rsus IN PU T PO WER
0
10
20
30
40
50
60
-10-5
0
5
10
1520
INPUT POW E R P in(dBm)
0
4
8
12
16
20
24
f=430M Hz ,
V
DD=12.5V ,
V
GG=5 V
P
out
Gp
IDD
0
10
20
30
40
50
60
-10-5
0
5
10
1520
INPUT POW E R P in(dBm )
0
4
8
12
16
20
24
f=450M Hz ,
V
DD =12.5V ,
V
GG=5 V
P
out
Gp
IDD
0
10
20
30
40
50
60
-10-5
0
5
1015
20
INPUT POW E R P in(dBm)
0
4
8
12
16
20
24
f=470M Hz ,
V
DD=12.5V ,
V
GG=5 V
P
out
Gp
IDD
0
10
20
30
40
50
60
-10
-5
0
5
10
15
20
INPUT POW E R P in(dBm)
0
4
8
12
16
20
24
f=400M Hz ,
V
DD=12.5V ,
V
GG=5 V
P
out
Gp
IDD




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